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目錄:束蘊(yùn)儀器(上海)有限公司>>PID產(chǎn)品>>便攜式現(xiàn)場PID測試儀>> PID Check便攜式現(xiàn)場PID測試儀

便攜式現(xiàn)場PID測試儀
  • 便攜式現(xiàn)場PID測試儀
  • 便攜式現(xiàn)場PID測試儀
  • 便攜式現(xiàn)場PID測試儀
  • 便攜式現(xiàn)場PID測試儀
參考價 面議
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參考價 面議
具體成交價以合同協(xié)議為準(zhǔn)
  • 品牌 Freiberg Instruments
  • 型號 PID Check
  • 廠商性質(zhì) 代理商
  • 所在地 上海市
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更新時間:2024-09-12 08:56:56瀏覽次數(shù):712評價

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便攜式現(xiàn)場PID測試儀(電位誘發(fā)衰減)測試儀,適用于不同類型和尺寸的晶體硅組件,無需拆裝,測試時間在8小時之內(nèi)(測量時間將少于8小時)。PIDcheck是與德國Fraunhofer CSP Halle合作開發(fā)的。

便攜式現(xiàn)場PID測試儀的好處和特點(diǎn)


安裝后或采購光伏電站前的質(zhì)量檢查

PIDcheck是能夠發(fā)現(xiàn)已安裝的光伏組件是否對PID敏感的工具。


功率和產(chǎn)量預(yù)測

如果PID已經(jīng)發(fā)生,只有PIDcheck的測量結(jié)果可以提供未來產(chǎn)量的預(yù)測。


評估針對PID的對策

PIDcheck設(shè)備能夠模擬恢復(fù)設(shè)備(偏移箱、浮動控制器)的應(yīng)用,因此有助于在其安裝前評估恢復(fù)效果。

用于現(xiàn)場PID恢復(fù)的可逆高壓極性

便攜式現(xiàn)場PID測試儀可測量的參數(shù)


分流電阻、功率損耗、電導(dǎo)率、泄漏電流、濕度和溫度

易于使用的便攜式設(shè)備

欲了解更多信息,請?jiān)L問www.pidcon。。com





●   原型:24個電池,在高壓下正向暗I-V曲線的測量

●   新功能:高壓可雙向施加應(yīng)力和恢復(fù) 在活動模塊中成功演示

●   Fraunhofer CSP 于2015年*提交認(rèn)證

●   2018年上市

●   用戶:評估員、操作員、服務(wù)專家、安裝人員、模塊制作人






* Patent pending ?Verfahren und Anordnung zur Prüfung eines Solarmoduls auf Anf?lligkeit für Potentialinduzierte Degradation", DE 10 2015 213 047 A1


參考文獻(xiàn): cells  (1)K. Sporleder, V. Naumann, J. Bauer, S. Richter, A. H?hnel, S. Gro?er, M. Turek, C. Hagendorf, Local corrosion of silicon as root cause for potential induced  degradation at the rear side of bifacial PERC solar cells. physica status solidi (RRL)–Rapid Research Letters. 2019, doi 10.1002/pssr.201900163

(2)V. Naumann, K. Ilse, M. Pander, J. Tr?ndle, K. Sporleder, C. Hagendorf, Influence of soiling and moisture ingress on long term PID susceptibility of photovoltaic

modules, AIP Conference Proceedings 2147, 090005 (2019).

(3)K. Sporleder, V. Naumann, J. Bauer, S. Richter, A. H?hnel, S. Gro?er, M. Turek, C. Hagendorf, Root cause analysis on corrosive potential-induced degradation effects  at the rear side of bifacial silicon PERC solar cells, Solar Energy Materials and Solar Cells 201, 110062 (2019).

(4)K. Sporleder, V. Naumann, J. Bauer, S. Richter, A. H?hnel, S. Gro?er, M. Turek, C. Hagendorf, Microstructural Analysis of Local Silicon Corrosion of Bifacial Solar Cells

as Root Cause of Potential‐Induced Degradation at the Rear Side, Phys. Status Solidi A (2019), doi:10.1002/pssa.201900334.

(5)K. Sporleder, J. Bauer, S. Gro?er, S. Richter, A. H?hnel, M. Turek, V. Naumann, K. Ilse, C. Hagendorf, Potential-Induced Degradation of Bifacial PERC Solar Cells Under  Illumination, IEEE Journal of Photovoltaics 9 (6) 1522-1525, 2019.

(6)K. Sporleder, M. Turek, N. Schüler, V. Naumann, D. Hevisov, C. P?blau, S. Gro?er, H. Schulte-Huxel, J. Bauer, C. Hagendorf, Quick test for reversible and irreversible  PID of bifacial PERC solar cells, Solar Energy Materials and Solar Cells 219, 110755, 2021.

(7)K. Sporleder, V. Naumann, J. Bauer, D. Hevisov, M. Turek, and C. Hagendorf, Time-resolved Investigation of Transient Field Effect Passivation States during Potential  Induced Degradation and Recovery of Bifacial Silicon Solar Cells , Solar RRL, 2021, accepted.

. Hagendorf, Microstructural Analysis of Local Silicon Corrosion of Bifacial Solar Cells

as Root Cause of Potential‐Induced Degradation at the Rear Side, Phys. Status Solidi A (2019), doi:10.1002/pssa.201900334.

(5)K. Sporleder, J. Bauer, S. Gro?er, S. Richter, A. H?hnel, M. Turek, V. Naumann, K. Ilse, C. Hagendorf, Potential-Induced Degradation of Bifacial PERC Solar Cells Under  Illumination, IEEE Journal of Photovoltaics 9 (6) 1522-1525, 2019.

(6)K. Sporleder, M. Turek, N. Schüler, V. Naumann, D. Hevisov, C. P?blau, S. Gro?er, H. Schulte-Huxel, J. Bauer, C. Hagendorf, Quick test for reversible and irreversible  PID of bifacial PERC solar cells, Solar Energy Materials and Solar Cells 219, 110755, 2021.

(7)K. Sporleder, V. Naumann, J. Bauer, D. Hevisov, M. Turek, and C. Hagendorf, Time-resolved Investigation of Transient Field Effect Passivation States during Potential  Induced Degradation and Recovery of Bifacial Silicon Solar Cells , Solar RRL, 2021, accepted.



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